FDMA507PZ MOSFET Datasheet: P-Ch, 20V, 7.8A. Full specification with pinout and replacement list

FDMA507PZ Specs and Replacement

Type Designator: FDMA507PZ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: MICROFET

FDMA507PZ substitution

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FDMA507PZ datasheet

..1. Size:302K fairchild semi
fdma507pz.pdf pdf_icon

May 2010 FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 m Features General Description This device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 A It features a MOSFET with low on-stade resist... See More ⇒

9.1. Size:283K fairchild semi
fdma520pz.pdf pdf_icon

April 2009 FDMA520PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.3A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5A It features a MOSFET with low o... See More ⇒

9.2. Size:787K fairchild semi
fdma530pz.pdf pdf_icon

June 2011 tm FDMA530PZ Single P-Channel PowerTrench MOSFET 30V, 6.8A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0A applications . It features a MOSFET with low on-st... See More ⇒

9.3. Size:306K fairchild semi
fdma510pz.pdf pdf_icon

April 2009 FDMA510PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6A It features a MOSFET with low o... See More ⇒