Справочник MOSFET. HM60N02K

 

HM60N02K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM60N02K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 27 nC
   trⓘ - Время нарастания: 17.2 ns
   Cossⓘ - Выходная емкость: 500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM60N02K

 

 

HM60N02K Datasheet (PDF)

 ..1. Size:492K  cn hmsemi
 hm60n02k.pdf

HM60N02K HM60N02K

HM60N02KDescription The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)

 7.1. Size:575K  cn hmsemi
 hm60n02.pdf

HM60N02K HM60N02K

HM60N02Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)

 8.1. Size:892K  cn hmsemi
 hm60n08.pdf

HM60N02K HM60N02K

HM60N08N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)

 8.2. Size:622K  cn hmsemi
 hm60n06k.pdf

HM60N02K HM60N02K

HM60N06KDescription The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

 8.3. Size:634K  cn hmsemi
 hm60n04.pdf

HM60N02K HM60N02K

HM60N04N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 8.4. Size:1263K  cn hmsemi
 hm60n05k.pdf

HM60N02K HM60N02K

HM60N05KN-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)

 8.5. Size:1063K  cn hmsemi
 hm60n05.pdf

HM60N02K HM60N02K

HM60N05N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)

 8.6. Size:504K  cn hmsemi
 hm60n06.pdf

HM60N02K HM60N02K

HM60N06Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

 8.7. Size:564K  cn hmsemi
 hm60n03d.pdf

HM60N02K HM60N02K

HM60N03DN-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)

 8.8. Size:677K  cn hmsemi
 hm60n03.pdf

HM60N02K HM60N02K

HM60N03N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)

 8.9. Size:646K  cn hmsemi
 hm60n04k.pdf

HM60N02K HM60N02K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 8.10. Size:729K  cn hmsemi
 hm60n03k.pdf

HM60N02K HM60N02K

HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON)

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