HM60N02K Datasheet: MOSFET, N-Ch, 20V, 60A. Full specification with pinout and replacement list

HM60N02K Datasheet. Specs and Replacement

Type Designator: HM60N02K 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

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HM60N02K substitution

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HM60N02K datasheet

..1. Size:492K cn hmsemi
hm60n02k.pdf pdf_icon

HM60N02K Description The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON) ... See More ⇒

7.1. Size:575K cn hmsemi
hm60n02.pdf pdf_icon

HM60N02 Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON) ... See More ⇒

8.1. Size:892K cn hmsemi
hm60n08.pdf pdf_icon

HM60N08 N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON) ... See More ⇒

8.2. Size:622K cn hmsemi
hm60n06k.pdf pdf_icon

HM60N06K Description The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON) ... See More ⇒