HM6401 datasheet, аналоги, основные параметры

Наименование производителя: HM6401  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3 ns

Cossⓘ - Выходная емкость: 115 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm

Тип корпуса: SOT23-6L

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Аналог (замена) для HM6401

- подборⓘ MOSFET транзистора по параметрам

 

HM6401 даташит

 ..1. Size:759K  cn hmsemi
 hm6401.pdf pdf_icon

HM6401

HM6401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.0A RDS(ON)

 9.1. Size:45K  chenmko
 chm640ngp.pdf pdf_icon

HM6401

CHENMKO ENTERPRISE CO.,LTD CHM640NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.0

 9.2. Size:1006K  cn hmsemi
 hm6409.pdf pdf_icon

HM6401

HM6409 P-Channel Enhancement Mode Power MOSFET Description D The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -20V,ID = -5.0A RDS(ON)

 9.3. Size:1121K  cn hmsemi
 hm6408.pdf pdf_icon

HM6401

HM6408 N-Channel Enhancement Mode Power MOSFET Description D The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 5.5A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HM60N08, HM60N10D, HM60N20, HM60N20D, HM60N75K, HM610AK, HM640, HM6400, IRF830, HM6408, HM6409, HM6602, HM6604, HM6620, HM6800, HM6801, HM6803