All MOSFET. HM6401 Datasheet

 

HM6401 Datasheet and Replacement


   Type Designator: HM6401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT23-6L
 

 HM6401 substitution

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HM6401 Datasheet (PDF)

 ..1. Size:759K  cn hmsemi
hm6401.pdf pdf_icon

HM6401

HM6401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.0A RDS(ON)

 9.1. Size:45K  chenmko
chm640ngp.pdf pdf_icon

HM6401

CHENMKO ENTERPRISE CO.,LTDCHM640NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.0

 9.2. Size:1006K  cn hmsemi
hm6409.pdf pdf_icon

HM6401

HM6409P-Channel Enhancement Mode Power MOSFET Description DThe HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -5.0A RDS(ON)

 9.3. Size:1121K  cn hmsemi
hm6408.pdf pdf_icon

HM6401

HM6408N-Channel Enhancement Mode Power MOSFET Description DThe HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 5.5A RDS(ON)

Datasheet: HM60N08 , HM60N10D , HM60N20 , HM60N20D , HM60N75K , HM610AK , HM640 , HM6400 , AO3407 , HM6408 , HM6409 , HM6602 , HM6604 , HM6620 , HM6800 , HM6801 , HM6803 .

History: IRLR9343TR | APT39F60J | IXTM6N60A | QS5U17 | HTN019N03P | FXN0504D | FQPF5N20L

Keywords - HM6401 MOSFET datasheet

 HM6401 cross reference
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