HM70P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM70P03 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -70A D SRDS(ON)

HM70P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM70P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -70A D SRDS(ON)

HM70P04Kwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl

HM70P02DP-Channel Enhancement Mode Power MOSFET Description The HM70P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-70A Schematic diagram RDS(ON)

HM70P04P-Channel Enhancement Mode Power MOSFET Description The HM70P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

HM70P04KP-Channel Enhancement Mode Power MOSFET Description The HM70P04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)