All MOSFET. HM70P03 Datasheet

 

HM70P03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM70P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220

 HM70P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM70P03 Datasheet (PDF)

 ..1. Size:1412K  cn hmsemi
 hm70p03.pdf

HM70P03 HM70P03

HM70P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM70P03 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -70A D SRDS(ON)

 0.1. Size:1139K  cn hmsemi
 hm70p03k.pdf

HM70P03 HM70P03

HM70P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM70P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -70A D SRDS(ON)

 8.1. Size:1761K  cn vbsemi
 hm70p04k.pdf

HM70P03 HM70P03

HM70P04Kwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl

 8.2. Size:595K  cn hmsemi
 hm70p02d.pdf

HM70P03 HM70P03

HM70P02DP-Channel Enhancement Mode Power MOSFET Description The HM70P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-70A Schematic diagram RDS(ON)

 8.3. Size:684K  cn hmsemi
 hm70p04.pdf

HM70P03 HM70P03

HM70P04P-Channel Enhancement Mode Power MOSFET Description The HM70P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

 8.4. Size:649K  cn hmsemi
 hm70p04k.pdf

HM70P03 HM70P03

HM70P04KP-Channel Enhancement Mode Power MOSFET Description The HM70P04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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