HM7N65 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HM7N65
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 110 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.26 Ohm
Тип корпуса: TO220
Аналог (замена) для HM7N65
HM7N65 Datasheet (PDF)
hm7n65 hm7n65f.pdf

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superio
hm7n65k hm7n65i.pdf

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior sw
hm7n60k hm7n60i.pdf

HM7N60K / HM7N60IHM7N60K / HM7N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin
hm7n60 hm7n60f.pdf

HM7N60 / HM7N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchin
Другие MOSFET... HM75N75K , HM75N80 , HM75N80D , HM7746K , HM7N60 , HM7N60F , HM7N60I , HM7N60K , 20N50 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , HM80N03A .
History: OSG60R380IF | FTK830F | RND030N20 | HTD350C04 | IPA60R520CP | HGP088N15S | HSU0139
History: OSG60R380IF | FTK830F | RND030N20 | HTD350C04 | IPA60R520CP | HGP088N15S | HSU0139



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