All MOSFET. HM7N65 Datasheet

 

HM7N65 Datasheet and Replacement


   Type Designator: HM7N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.26 Ohm
   Package: TO220
 

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HM7N65 Datasheet (PDF)

 ..1. Size:340K  cn hmsemi
hm7n65 hm7n65f.pdf pdf_icon

HM7N65

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superio

 0.1. Size:501K  cn hmsemi
hm7n65k hm7n65i.pdf pdf_icon

HM7N65

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior sw

 9.1. Size:666K  cn hmsemi
hm7n60k hm7n60i.pdf pdf_icon

HM7N65

HM7N60K / HM7N60IHM7N60K / HM7N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 9.2. Size:324K  cn hmsemi
hm7n60 hm7n60f.pdf pdf_icon

HM7N65

HM7N60 / HM7N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchin

Datasheet: HM75N75K , HM75N80 , HM75N80D , HM7746K , HM7N60 , HM7N60F , HM7N60I , HM7N60K , 20N50 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , HM80N03A .

History: S80N08RN | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S

Keywords - HM7N65 MOSFET datasheet

 HM7N65 cross reference
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