Справочник MOSFET. HM8N25K

 

HM8N25K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM8N25K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12.8 nC
   trⓘ - Время нарастания: 3.9 ns
   Cossⓘ - Выходная емкость: 83 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM8N25K

 

 

HM8N25K Datasheet (PDF)

 ..1. Size:418K  cn hmsemi
 hm8n25k.pdf

HM8N25K HM8N25K

HM8N25KGeneral Description VDSS 250 V HM8N25K, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.36 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

 9.1. Size:908K  cn hmsemi
 hm8n20ka.pdf

HM8N25K HM8N25K

HM8N20KAN-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 9.2. Size:626K  cn hmsemi
 hm8n20a.pdf

HM8N25K HM8N25K

HM8N20AN-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 9.3. Size:559K  cn hmsemi
 hm8n20i.pdf

HM8N25K HM8N25K

N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 9.4. Size:611K  cn hmsemi
 hm8n20.pdf

HM8N25K HM8N25K

HM8N20N-Channel Enhancement Mode Power MOSFET Description The HM8N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 9.5. Size:701K  cn hmsemi
 hm8n20k.pdf

HM8N25K HM8N25K

HM8N20KN-Channel Enhancement Mode Power MOSFET Description The HM8N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

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History: HMS38N60T | 10N60A | 12N65KG-TF1-T | BUK9612-55B

 

 
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