All MOSFET. HM8N25K Datasheet

 

HM8N25K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM8N25K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.8 nC
   trⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO252

 HM8N25K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM8N25K Datasheet (PDF)

 ..1. Size:418K  cn hmsemi
 hm8n25k.pdf

HM8N25K HM8N25K

HM8N25KGeneral Description VDSS 250 V HM8N25K, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.36 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

 9.1. Size:908K  cn hmsemi
 hm8n20ka.pdf

HM8N25K HM8N25K

HM8N20KAN-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 9.2. Size:626K  cn hmsemi
 hm8n20a.pdf

HM8N25K HM8N25K

HM8N20AN-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 9.3. Size:559K  cn hmsemi
 hm8n20i.pdf

HM8N25K HM8N25K

N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 9.4. Size:611K  cn hmsemi
 hm8n20.pdf

HM8N25K HM8N25K

HM8N20N-Channel Enhancement Mode Power MOSFET Description The HM8N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 9.5. Size:701K  cn hmsemi
 hm8n20k.pdf

HM8N25K HM8N25K

HM8N20KN-Channel Enhancement Mode Power MOSFET Description The HM8N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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