HMS110N15 datasheet, подбор замены

 ..1. Size:520K  cn hmsemi
 hms110n15.pdf 

HMS110N15 N-Channel Super Trench Power MOSFET Description The HMS110N15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

 9.1. Size:737K  cn hmsemi
 hms11n60d hms11n60 hms11n60f.pdf 

HMS11N60D,HMS11N60,HMS11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p

 9.2. Size:682K  cn hmsemi
 hms11n60k hms11n60i.pdf 

HMS11N60K/HMS11N60I HMS11N60K/HMS11N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 600V, RDS(on) typ. = 0.34 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

 9.3. Size:683K  cn hmsemi
 hms11n65k hms11n65i.pdf 

HMS11N65K/HMS11N65I HMS11N65K/HMS11N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 650V, RDS(on) typ. = 0.38 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

 9.4. Size:876K  cn hmsemi
 hms11n65i hms11n65k.pdf 

HMS11N65I / HMS11N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 9.5. Size:696K  cn hmsemi
 hms11n70d hms11n70k hms11n70f hms11n70b hms11n70 hms11n70i.pdf 

HMS11N70K,HMS11N70I,HMS11N70 HMS11N70F,HMS11N70D,HMS11N70B 700V N-Channel MOSFET Features General Description Features -11A, 700V, RDS(on) typ.= 0.4 @VGS = 10 V This Power MOSFET is produced using H&M Semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High

 9.6. Size:703K  cn hmsemi
 hms11n65 hms11n65d hms11n65f.pdf 

HMS11N65/ HMS11N65F/HMS11N65D General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features New technology