Справочник MOSFET. VS3620DP-G

 

VS3620DP-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VS3620DP-G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 540 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
   Тип корпуса: PDFN5X6

 Аналог (замена) для VS3620DP-G

 

 

VS3620DP-G Datasheet (PDF)

 ..1. Size:983K  cn vgsemi
 vs3620dp-g.pdf

VS3620DP-G VS3620DP-G

VS3620DP-G30V/36A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 4.9 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 7.3 m Enhancement modeI D(Silicon Limited) 56 A Very low on-resistanceI D(Package Limited) 36 A VitoMOS TechnologyPDFN5x6 Dual Fast Switching and High efficiency 100% Avalanche Tested,100% Rg TestedPar

 6.1. Size:1033K  cn vgsemi
 vs3620dp2-g.pdf

VS3620DP-G VS3620DP-G

VS3620DP2-G30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.6 4.6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 7.6 7.6 m Very low on-resistanceI D(Wire bond Limited) 45 45 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Dual Opt2 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimiz

 7.1. Size:1036K  cn vgsemi
 vs3620de-g.pdf

VS3620DP-G VS3620DP-G

VS3620DE-G30V/18A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 9 m VitoMOS TechnologyI D(Silicon Limited) 37 A Fast Switching and High efficiencyI D(Package Limited) 18 A 100% Avalanche TestedPDFN3333 DualPart ID Package Type Marking PackingVS3620DE-G PDFN3333 Dual 36

 8.1. Size:2373K  cn vanguard
 vs3620gpmc.pdf

VS3620DP-G VS3620DP-G

VS3620GPMC30V/36A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.1 m VitoMOS TechnologyI D(Silicon Limited) 60 A Fast Switching and High efficiencyI D(Package Limited) 36 A 100% Avalanche testPDFN5x6Part ID Package Type Marking PackingVS3620GPMC PDFN5x6 3620GP 3000PCS/Reel

 8.2. Size:973K  cn vgsemi
 vs3620ga.pdf

VS3620DP-G VS3620DP-G

VS3620GA30V/23A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.7 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.8 m VitoMOS TechnologyI D(Silicon Limited) 55 A Fast Switching and High efficiencyI D(Package Limited) 23 A 100% Avalanche testDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3620GA DFN2x2x0.75-6L 3620 3000

 8.3. Size:1094K  cn vgsemi
 vs3620gpmc.pdf

VS3620DP-G VS3620DP-G

VS3620GPMC30V/36A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.1 m VitoMOS TechnologyI D(Silicon Limited) 60 A Fast Switching and High efficiencyI D(Package Limited) 36 A 100% Avalanche testPDFN5x6Part ID Package Type Marking PackingVS3620GPMC PDFN5x6 3620GP 3000PCS/Reel

 8.4. Size:1093K  cn vgsemi
 vs3620gemc.pdf

VS3620DP-G VS3620DP-G

VS3620GEMC30V/40A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.9 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8 m Very low on-resistanceI D(Silicon Limited) 60 A VitoMOS TechnologyI D(Package Limited) 40 A Fast Switching and High efficiencyPDFN3333 100% Avalanche testPart ID Package Type Marking PackingVS3620GEMC

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