Справочник MOSFET. SRT04N016L

 

SRT04N016L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SRT04N016L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 173 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 1600 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm
   Тип корпуса: PDFN5X6
 

 Аналог (замена) для SRT04N016L

   - подбор ⓘ MOSFET транзистора по параметрам

 

SRT04N016L Datasheet (PDF)

 ..1. Size:1350K  sanrise-tech
 srt04n016l.pdf pdf_icon

SRT04N016L

Datasheet1.6m, 40V, N-Channel Power MOSFET SRT04N016LGeneral Description SymbolThe Sanrise SRT04N016L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

 0.1. Size:1745K  sanrise-tech
 srt04n016ls.pdf pdf_icon

SRT04N016L

Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 5.1. Size:970K  sanrise-tech
 srt04n016il.pdf pdf_icon

SRT04N016L

Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require super

 6.1. Size:1483K  sanrise-tech
 srt04n012l.pdf pdf_icon

SRT04N016L

Datasheet1.2m, 40V, N-Channel Power MOSFET SRT04N012LGeneral Description SymbolThe Sanrise SRT04N012L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SRT03N050LD56TR-G , SRT045N012H , SRT045N012HS2 , SRT045N012HTC-GS , SRT045N025H , SRT045N060H , SRT04N012L , SRT04N016IL , 8205A , SRT04N016LS2TR-GS , SRT04N016LTC-GS , SRT04N016LDTR-GS , SRT04N024L , SRT04N024LD56TR-GS , SRT04N037L , SRT04N037LS , SRT06N022HD .

History: HS54095TZ-E | STP30NF10FP | SFFC40-28 | SWD5N65K | FDN371N | SIA465EDJ | SNN3100L15Q

 

 
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