SRT04N016L Datasheet. Specs and Replacement

Type Designator: SRT04N016L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 173 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: PDFN5X6

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SRT04N016L datasheet

 ..1. Size:1350K  sanrise-tech
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SRT04N016L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016L General Description Symbol The Sanrise SRT04N016L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous... See More ⇒

 0.1. Size:1745K  sanrise-tech
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SRT04N016L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio... See More ⇒

 5.1. Size:970K  sanrise-tech
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SRT04N016L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require super... See More ⇒

 6.1. Size:1483K  sanrise-tech
 srt04n012l.pdf pdf_icon

SRT04N016L

Datasheet 1.2m , 40V, N-Channel Power MOSFET SRT04N012L General Description Symbol The Sanrise SRT04N012L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous... See More ⇒

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Detailed specifications: SRT03N050LD56TR-G, SRT045N012H, SRT045N012HS2, SRT045N012HTC-GS, SRT045N025H, SRT045N060H, SRT04N012L, SRT04N016IL, 13N50, SRT04N016LS2TR-GS, SRT04N016LTC-GS, SRT04N016LDTR-GS, SRT04N024L, SRT04N024LD56TR-GS, SRT04N037L, SRT04N037LS, SRT06N022HD

Keywords - SRT04N016L MOSFET specs

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