FDMS2508SDC. Аналоги и основные параметры
Наименование производителя: FDMS2508SDC
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 78 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 49 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: POWER56
Аналог (замена) для FDMS2508SDC
- подборⓘ MOSFET транзистора по параметрам
FDMS2508SDC даташит
fdms2508sdc.pdf
July 2010 FDMS2508SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m
fdms2502sdc.pdf
July 2010 FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at
fdms2506sdc.pdf
July 2010 FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m
fdms2504sdc.pdf
July 2010 FDMS2504SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m
Другие MOSFET... FDMQ8203 , STM9926 , STM9435 , FDMS0312S , STM8820 , FDMS2502SDC , FDMS2504SDC , FDMS2506SDC , AON6380 , FDMS2510SDC , FDMS2572 , FDMS2672 , STM8601 , FDMS2734 , FDMS3500 , FDMS3572 , FDMS3600S .
History: TK5A60W | AOD407 | DMP2225L | IXFQ50N50P3 | MSF10N65 | GKI03039 | STS3417
History: TK5A60W | AOD407 | DMP2225L | IXFQ50N50P3 | MSF10N65 | GKI03039 | STS3417
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Список транзисторов
Обновления
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
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