STM8358S - описание и поиск аналогов

S T M8358S S amHop Microelectronics C orp. Oct.28, 2005 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) (N-C hannel) (P P R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel) V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max 48 @ V G S = -10V 25 @ VG S = 10V -30V -5.2A 30V 7.2A 72 @ V G S = -4.5V 36 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1

Green Product STM8324 a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 31 @ VGS=10V 35 @ VGS=-10V 30V 6.5A -30V -6A 42 @ VGS=4.5V 53 @ VGS=-4.5V 5 4 D2 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C

Green Product STM8309 SamHop Microelectronics Corp. Oct.13, 2006 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) PRODUCT SUMMARY (N-Channel) (P-Channel) PRODUCT SUMMARY VDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max 23 @ VGS = 10V 35 @ VGS = -10V -30V -6A 30V 7A 30 @ VGS = 4.5V 52 @ VGS = -4.5V D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSO

Green Product STM8360T a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 29 @ VGS=10V 42 @ VGS=-10V 40V 6.6A -40V -5.5A 45 @ VGS=4.5V 65 @ VGS=-4.5V D2 5 4 G 2 D2 6 3 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TC=25 C

Green Product STM8362 a S mHop Microelectronics C orp. Ver 1.1 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 29 @ VGS=10V 38 @ VGS=-10V 40V 6.6A -40V -5.8A 45 @ VGS=4.5V 60 @ VGS=-4.5V D2 5 4 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 D1 8 1 S 1 1 (TC=25 C un

Green Product STM8300 a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 46 @ VGS=10V 56 @ VGS=-10V 30V 5.3A -30V -4.7A 65 @ VGS=4.5V 90 @ VGS=-4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25

Green Product STM8319 a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 25 @ VGS=10V 35 @ VGS=-10V 30V 7A -30V -6A 30 @ VGS=4.5V 52 @ VGS=-4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C un

Green Product S TM8306 S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) PR ODUC T S UMMAR Y (N-C hannel) (P PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 26 @ VG S = 10V 38 @ VG S = -10V 7A -30V -6A 30V 35 @ VG S = 4.5 52 @ VG S = -4.5V D1 D1 D2 D2 8 7 6 5 S O-8

STM8320 a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 23 @ VGS=10V 35 @ VGS=-10V 30V 7.5A -30V -6.0A 35 @ VGS=4.5V 55 @ VGS=-4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C unless otherwi

Green Product STM8330 a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 35 @ VGS=10V 76 @ VGS=-10V 30V 6A -30V -4.2A 55 @ VGS=4.5V 138 @ VGS=-4.5V D2 5 4 G 2 D2 6 3 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 C (TC=25

STM8362 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS

STM8319 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS