HCD90R1K6 - параметры транзистора MOSFET, его аналоги, datasheet

HCD90R1K6 Datasheet (PDF)

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Apr. 2023HCD90R1K6900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 3.8 A Excellent stability and uniformityRDS(on), max 1.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

6.1. Size:595K semihow
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Apr. 2023HCD90R1K0900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 13.7 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swit

8.1. Size:596K semihow
hcd90r450.pdf pdf_icon

Apr 2023HCD90R450900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 10.7 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

8.2. Size:595K semihow
hcd90r800.pdf pdf_icon

Apr. 2023HCD90R800900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.8 100% Avalanche Tested Built-in ESD DiodeQg, Typ 17.4 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swit

Другие MOSFET... HCD65R2K2 , HCD65R2K7 , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , IRFZ48N , HCD90R450 , HCD90R800 , HCF65R320 , HCF65R550 , HCF70R360 , HCF70R600 , HCF70R910 , HCFL60R115 .