HFD5N65SA - Даташиты. Аналоги. Основные параметры
Наименование производителя: HFD5N65SA
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 91 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 53 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.9 Ohm
Тип корпуса: TO252A
Аналог (замена) для HFD5N65SA
HFD5N65SA Datasheet (PDF)
hfu5n65sa hfd5n65sa.pdf

May. 2022HFU5N65SA / HFD5N65SA650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.2 A Excellent Switching CharacteristicsRDS(on), Typ 2.3 100% Avalanche TestedQg, Typ 14.2 nC RoHS CompliantHFU5N65SA HFD5N65SASymbolTO
hfd5n65s.pdf

Mar 2010BVDSS = 650 VRDS(on) typ = 2.3 HFD5N65S / HFU5N65SID = 4.0 A650V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD5N65S HFU5N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ
hfd5n65u.pdf

Jan 2014BVDSS = 650 VRDS(on) typ = 2.3 HFD5N65U / HFU5N65U ID = 3.6 A650V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N65U HFU5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC
hfd5n60s.pdf

Sep 2009BVDSS = 600 VRDS(on) typ = 2.0 HFD5N60S / HFU5N60SID = 4.3 A600V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD5N60S HFU5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ
Другие MOSFET... HFA20N50U , HFA24N50G , HFB1N60F , HFC2N60U , HFD1N60F , HFD1N60SA , HFD2N60F , HFD5N60F , 75N75 , HFH9N90A , HFI50N06A , HFI5N50S , HFI5N60S , HFP2N60F , HFP4N60F , HFP50N06A , HFP5N60F .
History: SIR422DP | MSU5N60D | IRHNA67160 | 2SK954 | SST60R280S2 | 2SK1237 | BRF60R580C
History: SIR422DP | MSU5N60D | IRHNA67160 | 2SK954 | SST60R280S2 | 2SK1237 | BRF60R580C



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