FDP150N10AF102 - параметры транзистора MOSFET, его аналоги, datasheet

FDP150N10AF102 Datasheet (PDF)

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July 2011FDP150N10A_F102tmN-Channel PowerTrench MOSFET 100V, 50A, 15mFeatures Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performa

4.2. Size:776K fairchild semi
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November 2013FDP150N10AN-Channel PowerTrench MOSFET100 V, 50 A, 15 mFeatures Description RDS(on) = 12.5 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintainingsuperior switching performance.

5.1. Size:516K fairchild semi
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July 2008FDP150N10tmN-Channel PowerTrench MOSFET 100V, 57A, 15mFeatures General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per

5.2. Size:283K inchange semiconductor
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isc N-Channel MOSFET Transistor FDP150N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 15m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

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