Справочник MOSFET. FDP150N10AF102

 

FDP150N10AF102 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDP150N10AF102
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 91 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 16.2 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FDP150N10AF102

 

 

FDP150N10AF102 Datasheet (PDF)

 4.1. Size:317K  fairchild semi
 fdp150n10a f102.pdf

FDP150N10AF102 FDP150N10AF102

July 2011FDP150N10A_F102tmN-Channel PowerTrench MOSFET 100V, 50A, 15mFeatures Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performa

 4.2. Size:776K  fairchild semi
 fdp150n10a.pdf

FDP150N10AF102 FDP150N10AF102

November 2013FDP150N10AN-Channel PowerTrench MOSFET100 V, 50 A, 15 mFeatures Description RDS(on) = 12.5 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintainingsuperior switching performance.

 5.1. Size:516K  fairchild semi
 fdp150n10.pdf

FDP150N10AF102 FDP150N10AF102

July 2008FDP150N10tmN-Channel PowerTrench MOSFET 100V, 57A, 15mFeatures General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per

 5.2. Size:283K  inchange semiconductor
 fdp150n10.pdf

FDP150N10AF102 FDP150N10AF102

isc N-Channel MOSFET Transistor FDP150N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 15m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Другие MOSFET... FDP120N10 , STM4470E , FDP12N50 , FDP12N50NZ , FDP12N60NZ , STM4470A , FDP150N10 , STM4470 , IRF640 , STM4460 , FDP15N40 , STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A , FDP18N50 , FDP19N40 .

 

 
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