FDP150N10AF102 Datasheet. Specs and Replacement
Type Designator: FDP150N10AF102 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 91 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220
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FDP150N10AF102 substitution
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FDP150N10AF102 datasheet
fdp150n10a f102.pdf
July 2011 FDP150N10A_F102 tm N-Channel PowerTrench MOSFET 100V, 50A, 15m Features Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performa... See More ⇒
fdp150n10a.pdf
November 2013 FDP150N10A N-Channel PowerTrench MOSFET 100 V, 50 A, 15 m Features Description RDS(on) = 12.5 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. ... See More ⇒
fdp150n10.pdf
July 2008 FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15m Features General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per... See More ⇒
Detailed specifications: FDP120N10, STM4470E, FDP12N50, FDP12N50NZ, FDP12N60NZ, STM4470A, FDP150N10, STM4470, IRFP460, STM4460, FDP15N40, STM4446, FDP16AN08A0, FDP18N20F, STM4439A, FDP18N50, FDP19N40
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