All MOSFET. FDP150N10AF102 Datasheet

 

FDP150N10AF102 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDP150N10AF102
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16.2 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220

 FDP150N10AF102 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP150N10AF102 Datasheet (PDF)

 4.1. Size:317K  fairchild semi
 fdp150n10a f102.pdf

FDP150N10AF102 FDP150N10AF102

July 2011FDP150N10A_F102tmN-Channel PowerTrench MOSFET 100V, 50A, 15mFeatures Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performa

 4.2. Size:776K  fairchild semi
 fdp150n10a.pdf

FDP150N10AF102 FDP150N10AF102

November 2013FDP150N10AN-Channel PowerTrench MOSFET100 V, 50 A, 15 mFeatures Description RDS(on) = 12.5 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintainingsuperior switching performance.

 5.1. Size:516K  fairchild semi
 fdp150n10.pdf

FDP150N10AF102 FDP150N10AF102

July 2008FDP150N10tmN-Channel PowerTrench MOSFET 100V, 57A, 15mFeatures General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per

 5.2. Size:283K  inchange semiconductor
 fdp150n10.pdf

FDP150N10AF102 FDP150N10AF102

isc N-Channel MOSFET Transistor FDP150N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 15m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top