Справочник MOSFET. FDP8876

 

FDP8876 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP8876
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FDP8876

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDP8876 Datasheet (PDF)

 ..1. Size:308K  fairchild semi
fdp8876.pdfpdf_icon

FDP8876

November 2005FDP8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

 8.1. Size:469K  fairchild semi
fdp8874.pdfpdf_icon

FDP8876

NMay 2008tmMFDP8874N-Channel PowerTrench MOSFET30V, 114A, 5.3mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.6m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized

 8.2. Size:337K  fairchild semi
fdp8870 f085.pdfpdf_icon

FDP8876

July 2010FDP8870_F085N-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized fo

 8.3. Size:463K  fairchild semi
fdp8870.pdfpdf_icon

FDP8876

eMay 2008FDP8870 tmMN-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f

Другие MOSFET... FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 , FDP8874 , STK801 , CS150N03A8 , STK600 , FDP8880 , STK400 , FDP8896 , STK103 , FDP8N50NZ , FDPF10N50FT , FDPF10N50UT .

History: SSH4N60 | HAF1002 | IXFK90N30

 

 
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