FDP8876 datasheet, аналоги, основные параметры
Наименование производителя: FDP8876 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm
Тип корпуса: TO220
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Аналог (замена) для FDP8876
- подборⓘ MOSFET транзистора по параметрам
FDP8876 даташит
fdp8876.pdf
November 2005 FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona
fdp8874.pdf
N May 2008 tmM FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.6m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized
fdp8870 f085.pdf
July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo
fdp8870.pdf
e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f
Другие IGBT... FDP8860, STM102D, FDP8870, STM101N, FDP8870F085, STK900, FDP8874, STK801, K3569, STK600, FDP8880, STK400, FDP8896, STK103, FDP8N50NZ, FDPF10N50FT, FDPF10N50UT
Параметры MOSFET. Взаимосвязь и компромиссы
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