FDP8876 Datasheet. Specs and Replacement

Type Designator: FDP8876  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm

Package: TO220

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FDP8876 datasheet

 ..1. Size:308K  fairchild semi
fdp8876.pdf pdf_icon

FDP8876

November 2005 FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona... See More ⇒

 8.1. Size:469K  fairchild semi
fdp8874.pdf pdf_icon

FDP8876

N May 2008 tmM FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.6m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized ... See More ⇒

 8.2. Size:337K  fairchild semi
fdp8870 f085.pdf pdf_icon

FDP8876

July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo... See More ⇒

 8.3. Size:463K  fairchild semi
fdp8870.pdf pdf_icon

FDP8876

e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f... See More ⇒

Detailed specifications: FDP8860, STM102D, FDP8870, STM101N, FDP8870F085, STK900, FDP8874, STK801, K3569, STK600, FDP8880, STK400, FDP8896, STK103, FDP8N50NZ, FDPF10N50FT, FDPF10N50UT

Keywords - FDP8876 MOSFET specs

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