FDP8876 PDF and Equivalents Search

 

FDP8876 Specs and Replacement


   Type Designator: FDP8876
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: TO220
 

 FDP8876 substitution

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FDP8876 datasheet

 ..1. Size:308K  fairchild semi
fdp8876.pdf pdf_icon

FDP8876

November 2005 FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona... See More ⇒

 8.1. Size:469K  fairchild semi
fdp8874.pdf pdf_icon

FDP8876

N May 2008 tmM FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.6m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized ... See More ⇒

 8.2. Size:337K  fairchild semi
fdp8870 f085.pdf pdf_icon

FDP8876

July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo... See More ⇒

 8.3. Size:463K  fairchild semi
fdp8870.pdf pdf_icon

FDP8876

e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f... See More ⇒

Detailed specifications: FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 , FDP8874 , STK801 , IRF520 , STK600 , FDP8880 , STK400 , FDP8896 , STK103 , FDP8N50NZ , FDPF10N50FT , FDPF10N50UT .

Keywords - FDP8876 MOSFET specs

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