WMN12N100C2. Аналоги и основные параметры

Наименование производителя: WMN12N100C2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 32 ns

Cossⓘ - Выходная емкость: 49 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm

Тип корпуса: TO262

Аналог (замена) для WMN12N100C2

- подборⓘ MOSFET транзистора по параметрам

 

WMN12N100C2 даташит

 ..1. Size:653K  way-on
 wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf pdf_icon

WMN12N100C2

WML12N100C2, WMM C2 W M12N100C WMN12N WMJ12N10 K12N100C N100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C

 6.1. Size:923K  way-on
 wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf pdf_icon

WMN12N100C2

WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET Description WMOSTM C2 is Wayon s 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic

 8.1. Size:685K  samwin
 swmn12n65da.pdf pdf_icon

WMN12N100C2

SW12N65DA N-channel Enhanced mode TO-220SF MOSFET TO-220SF Features BVDSS 650V ID 12A High ruggedness Low RDS(ON) (Typ 0.75 )@VGS=10V RDS(ON) 0.75 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application LED, Charger, PC Power 1 1. Gate 2. Drain 3. Source 3 General Description Th

 8.2. Size:673K  samwin
 swmn12n65d swy12n65d.pdf pdf_icon

WMN12N100C2

SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS 650V Features ID 12A High ruggedness RDS(ON) 0.66 Low RDS(ON) (Typ 0.66 )@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... WMN11N80M3, WMM11N80M3, WMO11N80M3, WMP11N80M3, WMK11N80M3, WML125N12LG2, WML12N100C2, WMM12N100C2, SKD502T, WMJ12N100C2, WMK12N100C2, WML12N105C2, WMM12N105C2, WMN12N105C2, WMJ12N105C2, WMK12N105C2, WML12N65D1