WMN12N100C2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMN12N100C2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 49 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: TO262
- подбор MOSFET транзистора по параметрам
WMN12N100C2 Datasheet (PDF)
wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf

WML12N100C2, WMM C2 W M12N100CWMN12N WMJ12N10 K12N100CN100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf

WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET DescriptionWMOSTM C2 is Wayons 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic
swmn12n65da.pdf

SW12N65DA N-channel Enhanced mode TO-220SF MOSFET TO-220SF Features BVDSS : 650V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) :0.75 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED, Charger, PC Power 1 1. Gate 2. Drain 3. Source 3 General Description Th
swmn12n65d swy12n65d.pdf

SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS : 650V Features ID : 12A High ruggedness RDS(ON) : 0.66 Low RDS(ON) (Typ 0.66)@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PHU97NQ03LT | VSE002N03MS-G | IPD30N06S2-23 | 2SK3430-ZJ | NTTFS4932NTAG | IXTP4N50A | R6535KNZ1
History: PHU97NQ03LT | VSE002N03MS-G | IPD30N06S2-23 | 2SK3430-ZJ | NTTFS4932NTAG | IXTP4N50A | R6535KNZ1



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