FDPF5N50T - параметры транзистора MOSFET, его аналоги, datasheet

FDPF5N50T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: FDPF5N50T
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 28 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 11 nC
   Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
   Тип корпуса: TO220F

Аналог (замена) для FDPF5N50T

FDPF5N50T Datasheet (PDF)

..1. Size:580K fairchild semi
fdpf5n50t.pdf

November 2013FDPF5N50TN-Channel UniFETTM MOSFET500 V, 5 A, 1.4 Features Description RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 11 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5 pF)provi

..2. Size:688K onsemi
fdpf5n50t.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:265K fairchild semi
fdp5n50 fdpf5n50.pdf

December 2007UniFETTMFDP5N50 / FDPF5N50tmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has bee

6.2. Size:247K fairchild semi
fdp5n50nz fdpf5n50nz.pdf

March 2010UniFET-IITMFDP5N50NZ / FDPF5N50NZtmN-Channel MOSFET500V, 4.5A, 1.5Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC)DMOS technology. Low Crss (Typ. 4pF)This advance technology has b

6.3. Size:256K fairchild semi
fdp5n50nzf fdpf5n50nzf.pdf

February 2010TMUniFET-IIFDP5N50NZF / FDPF5N50NZFtmN-Channel MOSFET500V, 4.2A, 1.75Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advanc

6.4. Size:427K fairchild semi
fdp5n50f fdpf5n50ft.pdf

December 2007UniFETTMFDP5N50F / FDPF5N50FTtmN-Channel MOSFET, FRFET 500V, 4.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced tech

6.5. Size:224K fairchild semi
fdp5n50u fdpf5n50ut.pdf

November2009TMUltra FRFETFDP5N50U / FDPF5N50UTtmN-Channel MOSFET, FRFET500V, 4A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance tech

6.6. Size:702K fairchild semi
fdp5n50nzu fdpf5n50nzu.pdf

February 2010TMUniFET-IIFDP5N50NZU / FDPF5N50NZUtmN-Channel MOSFET500V, 3.9A, 2.0Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advance

6.7. Size:948K onsemi
fdpf5n50nzu.pdf