All MOSFET. FDPF5N50T Datasheet

 

FDPF5N50T Datasheet and Replacement


   Type Designator: FDPF5N50T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

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FDPF5N50T Datasheet (PDF)

 ..1. Size:580K  fairchild semi
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FDPF5N50T

November 2013FDPF5N50TN-Channel UniFETTM MOSFET500 V, 5 A, 1.4 Features Description RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 11 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5 pF)provi

 ..2. Size:688K  onsemi
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FDPF5N50T

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:265K  fairchild semi
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FDPF5N50T

December 2007UniFETTMFDP5N50 / FDPF5N50tmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has bee

 6.2. Size:247K  fairchild semi
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FDPF5N50T

March 2010UniFET-IITMFDP5N50NZ / FDPF5N50NZtmN-Channel MOSFET500V, 4.5A, 1.5Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC)DMOS technology. Low Crss (Typ. 4pF)This advance technology has b

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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