WMO25N10T1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMO25N10T1
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 53.2 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 25 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 37.9 nC
Время нарастания (tr): 35.8 ns
Выходная емкость (Cd): 61.5 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.045 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO25N10T1
WMO25N10T1 Datasheet (PDF)
wmo25n10t1.pdf
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WMO25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 100V, I = 25A DS D R
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf
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WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wmo25n06ts.pdf
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WMO25N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 60V, I = 25A DS DR
wmo25p03ts.pdf
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WMO25P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -30V, I = -25A DS D TO-252R
wmo25p04ts.pdf
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WMO25P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -40V, I = -25A GDS DTO-252R
wmo25p06t1.pdf
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WMO25P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -60V, I = -25A DS DTO-252R
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![WMO25N10T1](https://alltransistors.com/images/us.png)
![WMO25N10T1](https://alltransistors.com/images/es.png)
![WMO25N10T1](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C