WMO25N10T1 MOSFET Datasheet: N-Ch, 100V, 25A. Full specification with pinout and replacement list

WMO25N10T1 Specs and Replacement

   Type Designator: WMO25N10T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 53.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 35.8 nS
   Cossⓘ - Output Capacitance: 61.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252

WMO25N10T1 substitution

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WMO25N10T1 datasheet

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WMO25N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMO25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 100V, I = 25A DS D R ... See More ⇒

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WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50C WMN2 MJ25N50C 25N50C4, WMM25N50C4, WM C4 500V 0.125 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM ... See More ⇒

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wmo25n06ts.pdf pdf_icon

WMO25N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMO25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 25A DS D R ... See More ⇒

9.1. Size:598K way-on
wmo25p03ts.pdf pdf_icon

WMO25P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMO25P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -30V, I = -25A DS D TO-252 R ... See More ⇒