FDS2672 - описание и поиск аналогов

August 2006 FDS2672 tm N-Channel UltraFET Trench MOSFET 200V, 3.9A, 70m Features General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor s advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance and ye

February 2010 FDS2672_F085 tm N-Channel UltraFET Trench MOSFET 200V, 3.9A, 70m Features General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor s advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance

SMD Type MOSFET N-Channel MOSFET FDS2672 (KDS2672) SOP-8 Features VDS (V) = 200V ID = 3.9A (VGS = 10V) RDS(ON) 70m (VGS = 10V) 1.50 0.15 RDS(ON) 80m (VGS = 6V) 5 4 6 3 5 Drain 1 Source 6 Drain 2 Source 7 2 7 Drain 3 Source 8 Drain 8 1 4 Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20

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August 2001 FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fast switching speed These MOSFETs f