All MOSFET. FDS2672 Datasheet

 

FDS2672 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS2672
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 2.5 W
   Maximum Drain-Source Voltage |Vds|: 200 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 3.9 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 33 nC
   Rise Time (tr): 10 nS
   Drain-Source Capacitance (Cd): 100 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
   Package: SO-8

 FDS2672 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS2672 Datasheet (PDF)

 ..1. Size:406K  fairchild semi
 fds2672.pdf

FDS2672 FDS2672

August 2006FDS2672tmN-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mFeatures General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductors advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance and ye

 ..2. Size:557K  fairchild semi
 fds2672 f085.pdf

FDS2672 FDS2672

February 2010FDS2672_F085tmN-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mFeatures General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductors advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance

 ..3. Size:1605K  kexin
 fds2672.pdf

FDS2672 FDS2672

SMD Type MOSFETN-Channel MOSFETFDS2672 (KDS2672)SOP-8 Features VDS (V) = 200V ID = 3.9A (VGS = 10V) RDS(ON) 70m (VGS = 10V)1.50 0.15 RDS(ON) 80m (VGS = 6V)5 46 3 5 Drain1 Source6 Drain2 Source7 27 Drain3 Source8 Drain8 1 4 Gate Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20

 0.1. Size:543K  1
 fds2672f085.pdf

FDS2672 FDS2672

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 8.1. Size:107K  fairchild semi
 fds2670.pdf

FDS2672 FDS2672

August 2001FDS2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fast switching speedThese MOSFETs f

Datasheet: FDQ7236AS , STF2458A , FDQ7238AS , STF2458 , FDS2572 , FDS2582 , FDS2670 , STF2456 , IRF530 , STF2455 , FDS2672F085 , STF2454A , FDS2734 , FDS3512 , FDS3572 , FDS3590 , FDS3672 .

 

 
Back to Top