WMS090DNV6LG4 - описание и поиск аналогов

WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L

WMS090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS090NV6LG4 uses Wayon's 4th generation power trench MOSFET S technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This G SOP-8L device is well suited for high efficiency fast switching applications. Features

WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET Description D D WMS09P02TS uses advanced power trench technology that has been D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = -20V, I = -9A DS D R

WMS09DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS09DP03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1 yet maintain superior switching performance. G1 S2 G2 Features SOP-8L V = -30V, I = -9A DS D R

WMS099N10LGS 100V N-Channel Enhancement Mode Power MOSFET D Description D D D WMS099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. SOP-8L Features V =

WMS09N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D WMS09N06TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 60V, I = 9A DS D R