WMS090DNV6LG4
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMS090DNV6LG4
Marking Code: 090DNV6L4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 12.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22.1
nC
trⓘ - Rise Time: 2.7
nS
Cossⓘ -
Output Capacitance: 377
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package: SOP-8L
WMS090DNV6LG4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMS090DNV6LG4
Datasheet (PDF)
..1. Size:979K way-on
wms090dnv6lg4.pdf 
WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8L
8.1. Size:746K way-on
wms090n04lg2.pdf
WMS090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS090N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures
8.2. Size:783K way-on
wms090nv6lg4.pdf
WMS090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS090NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features
9.1. Size:772K way-on
wms09p02ts.pdf
WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -9A DS DR
9.2. Size:687K way-on
wms09dp03ts.pdf
WMS09DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS09DP03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1yet maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -9A DS DR
9.3. Size:765K way-on
wms09p06ts.pdf
WMS09P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -60V, I = -8.5A DS DSOP-8LR
9.4. Size:747K way-on
wms099n10lgs.pdf
WMS099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures V =
9.5. Size:791K way-on
wms09n06ts.pdf
WMS09N06TS 60V N-Channel Enhancement Mode Power MOSFET Description DDDWMS09N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 60V, I = 9A DS D R
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