Справочник MOSFET. SWB058R06E7T

 

SWB058R06E7T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SWB058R06E7T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 223.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 79 ns
   Cossⓘ - Выходная емкость: 378 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO263

 Аналог (замена) для SWB058R06E7T

 

 

SWB058R06E7T Datasheet (PDF)

 ..1. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf

SWB058R06E7T SWB058R06E7T

SW058R06E7TN-channel Enhanced mode TO-220/TO-263 MOSFETTO-220 TO-263FeaturesBVDSS : 60VID : 120A High ruggedness Low RDS(ON) (Typ 5.8m)@VGS=10VRDS(ON) : 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 21 12 2 100% Avalanche Tested3 3 Application:Telecom, Computer, Inverter11. Gate 2. Drain 3. Source3General Description

 7.1. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf

SWB058R06E7T SWB058R06E7T

SW058R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 6.1m)@VGS=10V ID : 100A Low Gate Charge (Typ 104nC)RDS(ON) : 6.1m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

 9.1. Size:841K  samwin
 swp050r95e8s swb050r95e8s.pdf

SWB058R06E7T SWB058R06E7T

SW050R95E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 130A Low RDS(ON) (Typ 5.9m)@VGS=10V Low Gate Charge (Typ 50nC)RDS(ON) : 5.9m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Motor Drives11. Gate 2.Dra

 9.2. Size:828K  samwin
 swp056r68e7t swb056r68e7t.pdf

SWB058R06E7T SWB058R06E7T

SW056R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 120A Low RDS(ON) (Typ 5.8m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) :5.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

 9.3. Size:816K  samwin
 swp055r68e7t swb055r68e7t.pdf

SWB058R06E7T SWB058R06E7T

SW055R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.4. Size:662K  samwin
 swb051r08es swp051r08es.pdf

SWB058R06E7T SWB058R06E7T

SW051R08ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS : 80V TO-263 TO-220 ID : 120A High ruggedness Low RDS(ON) (Typ 5.1m)@VGS=10V RDS(ON) : 5.1m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Synchronous Rectification, 2 2 3 3 1 Li Battery Protect Board, Inverte

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History: IXFP6N120P

 

 
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