SWD051R08ES - аналоги, параметры транзистора - Справочник транзисторов

SWD051R08ES даташит

..1. Size:614K samwin
swi051r08es swd051r08es.pdf pdf_icon

SW051R08ES N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS 80V TO-251 TO-252 ID 90A High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V RDS(ON) 5.6m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application Synchronous Rectification, 2 3 3 1 Li Battery Protect Board, Inv

9.1. Size:659K samwin
swd055r03vt swi055r03vt.pdf pdf_icon

SW055R03VT N-channel Enhanced mode TO-252/TO-251 MOSFET Features BVDSS 30V TO-252 TO-251 High ruggedness ID 80A Low RDS(ON) (Typ 6.2m )@VGS=4.5V RDS(ON) 6.2m @VGS=4.5V (Typ 4.4m )@VGS=10V Low Gate Charge (Typ 25nC) 4.4m @VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application DC-DC Converter,Motor Control S

9.2. Size:820K samwin
swd056r68e7t.pdf pdf_icon

SW056R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 100A Low RDS(ON) (Typ 5.7m )@VGS=10V Low Gate Charge (Typ 102nC) RDS(ON) 5.7m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Desc

9.3. Size:846K samwin
swd050r95e8s.pdf pdf_icon

SW050R95E8S N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 100V High ruggedness ID 100A Low RDS(ON) (Typ 6.0m )@VGS=10V Low Gate Charge (Typ 48nC) RDS(ON) 6.0m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Drain 3.Source General

Другие MOSFET... SWC2N40D , SWD020R03VLT , SWD026R03VT , SWD030R03VLT , SWD030R04VT , SWD040R03VLT , SWD046R68E8T , SWD050R95E8S , AO3400 , SWD055R03VT , SWD056R68E7T , SWD062R08E8T , SWD062R68E7T , SWD065R03VLT , SWD065R68E7T , SWD068R08E8T , SWD068R68E7T .