SWU100R10VT - аналоги, параметры транзистора - Справочник транзисторов

SWU100R10VT даташит

..1. Size:836K samwin
swp100r10vt swi100r10vt swu100r10vt.pdf pdf_icon

SW100R10VT N-channel Enhanced mode TO-220/TO-251/TO-262 MOSFET Features TO-220 TO-251 TO-262 BVDSS 100V High ruggedness ID 69A Low RDS(ON) (Typ 11m )@VGS=4.5V (Typ 9.5m )@VGS=10V RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 73nC) 9.5m @VGS=10V Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 2 3 3 3

9.1. Size:1319K samwin
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SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1

9.2. Size:653K samwin
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SW10N70D N-channel Enhanced mode TO-262 MOSFET Features TO-262 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application LED, Charge, TV-Power 3 1 1. Gate 2. Drain 3. Source General Description 3 This power M

9.3. Size:1328K samwin
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SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio