June 2010FDS86240N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 mFeatures General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 2010FDS86242N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren

Sept 2017FDS86242N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 AThis N -Channel MOSFET is produ ced using ON Semiconductors advanced Power T rench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching per formance and High performance trench te

FDS86242www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-