FDS86240 Datasheet. Specs and Replacement

Type Designator: FDS86240  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0198 Ohm

Package: SO-8

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FDS86240 datasheet

 ..1. Size:238K  fairchild semi
 fds86240.pdf pdf_icon

FDS86240

June 2010 FDS86240 N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 m Features General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre... See More ⇒

 ..2. Size:419K  onsemi
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FDS86240

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:251K  fairchild semi
 fds86242.pdf pdf_icon

FDS86240

August 2010 FDS86242 N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren... See More ⇒

 7.2. Size:678K  onsemi
 fds86242.pdf pdf_icon

FDS86240

Sept 2017 FDS86242 N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N -Channel MOSFET is produ ced using ON Semiconductor s advanced Power T rench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching per formance and High performance trench te... See More ⇒

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Detailed specifications: FDS8449, FDS8449F085, FDS86106, SP8010E, FDS86140, SP8009EL, FDS86141, SP8005, P55NF06, FDS86242, FDS86252, FDS8638, FDS8813NZ, SP632S, FDS8817NZ, SP4412, FDS8840NZ

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