NCE3400XY datasheet, аналоги, основные параметры

Наименование производителя: NCE3400XY  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4.5 ns

Cossⓘ - Выходная емкость: 39 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm

Тип корпуса: SOT-23

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Аналог (замена) для NCE3400XY

- подборⓘ MOSFET транзистора по параметрам

 

NCE3400XY даташит

 ..1. Size:278K  ncepower
 nce3400xy.pdf pdf_icon

NCE3400XY

NCE3400XY http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features VDS = 30

 6.1. Size:298K  ncepower
 nce3400x.pdf pdf_icon

NCE3400XY

http //www.ncepower.com NCE3400X NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30V,

 7.1. Size:326K  ncepower
 nce3400.pdf pdf_icon

NCE3400XY

Pb Free Product http //www.ncepower.com NCE3400 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram

 7.2. Size:247K  ncepower
 nce3400ay.pdf pdf_icon

NCE3400XY

http //www.ncepower.com NCE3400AY NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30

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