Справочник MOSFET. NCE3400XY

 

NCE3400XY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE3400XY
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4.5 ns
   Cossⓘ - Выходная емкость: 39 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для NCE3400XY

 

 

NCE3400XY Datasheet (PDF)

 ..1. Size:278K  ncepower
 nce3400xy.pdf

NCE3400XY NCE3400XY

NCE3400XYhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features VDS = 30

 6.1. Size:298K  ncepower
 nce3400x.pdf

NCE3400XY NCE3400XY

http://www.ncepower.com NCE3400XNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30V,

 7.1. Size:326K  ncepower
 nce3400.pdf

NCE3400XY NCE3400XY

Pb Free Producthttp://www.ncepower.com NCE3400NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

 7.2. Size:247K  ncepower
 nce3400ay.pdf

NCE3400XY NCE3400XY

http://www.ncepower.com NCE3400AYNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30

 7.3. Size:238K  ncepower
 nce3400e.pdf

NCE3400XY NCE3400XY

http://www.ncepower.com NCE3400ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. Schematic diagram General Features

 7.4. Size:248K  ncepower
 nce3400a.pdf

NCE3400XY NCE3400XY

Pb Free Producthttp://www.ncepower.com NCE3400ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

 7.5. Size:848K  cn vbsemi
 nce3400a.pdf

NCE3400XY NCE3400XY

NCE3400Awww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top