NCE3400XY MOSFET Datasheet: N-Ch, 30V, 5.1A. Full specification with pinout and replacement list

NCE3400XY Specs and Replacement

   Type Designator: NCE3400XY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOT-23

NCE3400XY substitution

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NCE3400XY datasheet

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NCE3400XY http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features VDS = 30... See More ⇒

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http //www.ncepower.com NCE3400X NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30V,... See More ⇒

7.1. Size:326K ncepower
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Pb Free Product http //www.ncepower.com NCE3400 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram ... See More ⇒

7.2. Size:247K ncepower
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http //www.ncepower.com NCE3400AY NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30... See More ⇒