NCE50NF180K datasheet, аналоги, основные параметры

Наименование производителя: NCE50NF180K  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 129 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 52 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: TO252

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Аналог (замена) для NCE50NF180K

- подборⓘ MOSFET транзистора по параметрам

 

NCE50NF180K даташит

 ..1. Size:804K  ncepower
 nce50nf180k.pdf pdf_icon

NCE50NF180K

NCE50NF180K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

 4.1. Size:812K  ncepower
 nce50nf180.pdf pdf_icon

NCE50NF180K

NCE50NF180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indust

 4.2. Size:797K  ncepower
 nce50nf180i.pdf pdf_icon

NCE50NF180K

NCE50NF180I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

 4.3. Size:801K  ncepower
 nce50nf180d.pdf pdf_icon

NCE50NF180K

NCE50NF180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE50NF130K, NCE50NF130LL, NCE50NF130T, NCE50NF130V, NCE50NF180, NCE50NF180D, NCE50NF180F, NCE50NF180I, IRFP064N, NCE50NF220, NCE50NF220F, NCE50NF220I, NCE50NF220K, NCE50NF330, NCE50NF330D, NCE50NF330F, NCE50NF330I