NCE50NF180K MOSFET Datasheet: N-Ch, 500V, 17A. Full specification with pinout and replacement list

NCE50NF180K Specs and Replacement

   Type Designator: NCE50NF180K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 129 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO252

NCE50NF180K substitution

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NCE50NF180K datasheet

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NCE50NF180K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus... See More ⇒

4.1. Size:812K ncepower
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NCE50NF180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indust... See More ⇒

4.2. Size:797K ncepower
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NCE50NF180I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus... See More ⇒

4.3. Size:801K ncepower
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NCE50NF180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus... See More ⇒