NCE60N640D. Аналоги и основные параметры

Наименование производителя: NCE60N640D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 75 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 12 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.64 Ohm

Тип корпуса: TO-263

Аналог (замена) для NCE60N640D

- подборⓘ MOSFET транзистора по параметрам

 

NCE60N640D даташит

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NCE60N640D

NCE60N640D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 5.1. Size:814K  ncepower
 nce60n640f.pdf pdf_icon

NCE60N640D

NCE60N640F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 5.2. Size:793K  ncepower
 nce60n640k.pdf pdf_icon

NCE60N640D

NCE60N640K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 5.3. Size:808K  ncepower
 nce60n640i.pdf pdf_icon

NCE60N640D

NCE60N640I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE60N2K1R, NCE60N370K, NCE60N390, NCE60N390D, NCE60N390F, NCE60N390I, NCE60N390K, NCE60N640, IRFZ44, NCE60N640F, NCE60N640I, NCE60N640K, NCE60N670F, NCE60N670K, NCE60N700D, NCE60N700F, NCE60N700I