All MOSFET. NCE60N640D Datasheet

 

NCE60N640D Datasheet and Replacement


   Type Designator: NCE60N640D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
   Package: TO-263
 

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NCE60N640D Datasheet (PDF)

 ..1. Size:782K  ncepower
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NCE60N640D

NCE60N640DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 5.1. Size:814K  ncepower
 nce60n640f.pdf pdf_icon

NCE60N640D

NCE60N640FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 5.2. Size:793K  ncepower
 nce60n640k.pdf pdf_icon

NCE60N640D

NCE60N640KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 5.3. Size:808K  ncepower
 nce60n640i.pdf pdf_icon

NCE60N640D

NCE60N640IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

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Datasheet: NCE60N2K1R , NCE60N370K , NCE60N390 , NCE60N390D , NCE60N390F , NCE60N390I , NCE60N390K , NCE60N640 , IRFZ44 , NCE60N640F , NCE60N640I , NCE60N640K , NCE60N670F , NCE60N670K , NCE60N700D , NCE60N700F , NCE60N700I .

History: RU1H35S | BSO204P | PK5B3BA | FHD4N65E | RU1HC2H | YJD45P03A | MMP3401

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