FQA70N10 - аналоги, параметры транзистора - Справочник транзисторов

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August 2000 TM QFET QFET QFET QFET FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been

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April 2000 TM QFET QFET QFET QFET N-ChanneI Power MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 70A, 150 V, RDS(on) = 0.028 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 135 nC) planar stripe, DMOS technology. Low Crss ( typical 135 nC) This advanced technology has

7.2. Size:259K inchange semiconductor
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isc N-Channel MOSFET Transistor FQA70N15 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

Другие MOSFET... FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90CF109 , STF13NM60N , SDF04N65 , FQA70N15 , FQA7N80CF109 , SDF04N60 , FQA8N100C , FQA8N90CF109 , FQA90N08 , FQA90N15 .