FQA70N10 Datasheet. Specs and Replacement

Type Designator: FQA70N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO3PN

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FQA70N10 substitution

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FQA70N10 datasheet

 ..1. Size:675K  fairchild semi
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FQA70N10

August 2000 TM QFET QFET QFET QFET FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been... See More ⇒

 7.1. Size:786K  fairchild semi
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FQA70N10

April 2000 TM QFET QFET QFET QFET N-ChanneI Power MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 70A, 150 V, RDS(on) = 0.028 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 135 nC) planar stripe, DMOS technology. Low Crss ( typical 135 nC) This advanced technology has... See More ⇒

 7.2. Size:259K  inchange semiconductor
 fqa70n15.pdf pdf_icon

FQA70N10

isc N-Channel MOSFET Transistor FQA70N15 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

Detailed specifications: FQA40N25, FQA44N30, FQA46N15, FQA55N25, FQA62N25C, FQA65N20, SDF05N40T, FQA6N90CF109, HY1906P, SDF04N65, FQA70N15, FQA7N80CF109, SDF04N60, FQA8N100C, FQA8N90CF109, FQA90N08, FQA90N15

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