FQA70N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA70N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 214 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 85 nC
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO3PN
FQA70N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA70N10 Datasheet (PDF)
1.1. fqa70n10.pdf 
Size:675K _fairchild_semi
August 2000 TM QFET QFET QFET QFET FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 100V, RDS(on) = 0.023? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been especially t
3.1. fqa70n15.pdf Size:786K _fairchild_semi
April 2000 TM QFET QFET QFET QFET N-ChanneI Power MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 70A, 150 V, RDS(on) = 0.028 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 135 nC) planar stripe, DMOS technology. Low Crss ( typical 135 nC) This advanced technology has been especia
Datasheet: FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90C_F109 , 2N3824 , SDF04N65 , FQA70N15 , FQA7N80C_F109 , SDF04N60 , FQA8N100C , FQA8N90C_F109 , FQA90N08 , FQA90N15 .
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