FQA70N10 Datasheet and Replacement
Type Designator: FQA70N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO3PN
FQA70N10 substitution
FQA70N10 Datasheet (PDF)
fqa70n10.pdf

August 2000TMQFETQFETQFETQFETFQA70N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 70A, 100V, RDS(on) = 0.023 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 150 pF)This advanced technology has been
fqa70n15.pdf

April 2000TMQFETQFETQFETQFET N-ChanneI Power MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 70A, 150 V, RDS(on) = 0.028 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 135 nC)planar stripe, DMOS technology. Low Crss ( typical 135 nC)This advanced technology has
fqa70n15.pdf

isc N-Channel MOSFET Transistor FQA70N15FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90CF109 , IRF2807 , SDF04N65 , FQA70N15 , FQA7N80CF109 , SDF04N60 , FQA8N100C , FQA8N90CF109 , FQA90N08 , FQA90N15 .
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