All MOSFET. FQA70N10 Datasheet

 

FQA70N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA70N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 85 nC

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO3PN

FQA70N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA70N10 Datasheet (PDF)

1.1. fqa70n10.pdf Size:675K _fairchild_semi

FQA70N10 FQA70N10

August 2000 TM QFET QFET QFET QFET FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 150 pF) This advanced technology has been

3.1. fqa70n15.pdf Size:786K _fairchild_semi

FQA70N10 FQA70N10

April 2000 TM QFET QFET QFET QFET N-ChanneI Power MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 70A, 150 V, RDS(on) = 0.028 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 135 nC) planar stripe, DMOS technology. • Low Crss ( typical 135 nC) This advanced technology has

 

Datasheet: FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90C_F109 , 2N3824 , SDF04N65 , FQA70N15 , FQA7N80C_F109 , SDF04N60 , FQA8N100C , FQA8N90C_F109 , FQA90N08 , FQA90N15 .

 

 
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