Справочник MOSFET. NCE65N520

 

NCE65N520 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N520
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 93 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 21 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.53 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE65N520

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N520 Datasheet (PDF)

 ..1. Size:730K  ncepower
nce65n520.pdfpdf_icon

NCE65N520

NCE65N520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industria

 0.1. Size:731K  ncepower
nce65n520d.pdfpdf_icon

NCE65N520

NCE65N520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 0.2. Size:736K  ncepower
nce65n520k.pdfpdf_icon

NCE65N520

NCE65N520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 0.3. Size:757K  ncepower
nce65n520i.pdfpdf_icon

NCE65N520

NCE65N520IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

Другие MOSFET... NCE65N330I , NCE65N330K , NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F , NCE65N460I , NCE65N460K , K3569 , NCE65N520D , NCE65N520F , NCE65N520I , NCE65N520K , NCE65N760 , NCE65N760D , NCE65N760F , NCE65N760I .

History: CSFR3N60LP | AP10N4R5S

 

 
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