Справочник MOSFET. NCE65N520

 

NCE65N520 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N520
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 93 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 21 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.53 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

NCE65N520 Datasheet (PDF)

 ..1. Size:730K  ncepower
 nce65n520.pdf pdf_icon

NCE65N520

NCE65N520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industria

 0.1. Size:731K  ncepower
 nce65n520d.pdf pdf_icon

NCE65N520

NCE65N520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 0.2. Size:736K  ncepower
 nce65n520k.pdf pdf_icon

NCE65N520

NCE65N520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 0.3. Size:757K  ncepower
 nce65n520i.pdf pdf_icon

NCE65N520

NCE65N520IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

ПОКАЗАТЬ ЕЩЁ

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History: 2SJ119 | SIHG47N60S | AP03N40AI-HF | HGI110N08AL | BSP298 | NP70N04MUG | 9N95

 

 
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