NCE65N520. Аналоги и основные параметры

Наименование производителя: NCE65N520

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 93 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 21 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.53 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE65N520

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N520 даташит

 ..1. Size:730K  ncepower
 nce65n520.pdf pdf_icon

NCE65N520

NCE65N520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industria

 0.1. Size:731K  ncepower
 nce65n520d.pdf pdf_icon

NCE65N520

NCE65N520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri

 0.2. Size:736K  ncepower
 nce65n520k.pdf pdf_icon

NCE65N520

NCE65N520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri

 0.3. Size:757K  ncepower
 nce65n520i.pdf pdf_icon

NCE65N520

NCE65N520I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65N330I, NCE65N330K, NCE65N330R, NCE65N460, NCE65N460D, NCE65N460F, NCE65N460I, NCE65N460K, IRF9540, NCE65N520D, NCE65N520F, NCE65N520I, NCE65N520K, NCE65N760, NCE65N760D, NCE65N760F, NCE65N760I