NCE65N520F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65N520F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 31.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 12.8 nC
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 21 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.53 Ohm
Тип корпуса: TO-220F
Аналог (замена) для NCE65N520F
NCE65N520F Datasheet (PDF)
nce65n520f.pdf
NCE65N520FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri
nce65n520.pdf
NCE65N520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industria
nce65n520d.pdf
NCE65N520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri
nce65n520k.pdf
NCE65N520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri
nce65n520i.pdf
NCE65N520IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri
Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD