Справочник MOSFET. NCEP020N85D

 

NCEP020N85D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP020N85D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 340 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 300 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 39 ns
   Cossⓘ - Выходная емкость: 2450 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для NCEP020N85D

 

 

NCEP020N85D Datasheet (PDF)

 ..1. Size:410K  ncepower
 ncep020n85d.pdf

NCEP020N85D NCEP020N85D

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 ..2. Size:410K  ncepower
 ncep020n85 ncep020n85d.pdf

NCEP020N85D NCEP020N85D

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.1. Size:795K  ncepower
 ncep020n85ll.pdf

NCEP020N85D NCEP020N85D

http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a

 4.2. Size:410K  ncepower
 ncep020n85.pdf

NCEP020N85D NCEP020N85D

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.3. Size:399K  ncepower
 ncep020n85t.pdf

NCEP020N85D NCEP020N85D

NCEP020N85TNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.6m , typical @ VGS=10V losses are minimized due to an extremely low combinati

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