Справочник MOSFET. NCEP023N10T

 

NCEP023N10T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP023N10T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 365 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 280 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 1500 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для NCEP023N10T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP023N10T Datasheet (PDF)

 ..1. Size:2030K  ncepower
 ncep023n10t.pdf pdf_icon

NCEP023N10T

NCEP023N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =280ADS Dswitching performance. Both conduction and switching power R =1.85m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

 4.1. Size:855K  ncepower
 ncep023n10d.pdf pdf_icon

NCEP023N10T

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.2. Size:635K  ncepower
 ncep023n10 ncep023n10d.pdf pdf_icon

NCEP023N10T

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.3. Size:409K  ncepower
 ncep023n10ll.pdf pdf_icon

NCEP023N10T

NCEP023N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP0212F , NCEP0218G , NCEP0218K , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K , NCEP0230D , AO4468 , NCEP023N85M , NCEP023N85T , NCEP023NH30GU , NCEP02503S , NCEP02505S , NCEP02515F , NCEP02525G , NCEP02525K .

History: FQB8P10TM | OSG70R350PF | CSD16412Q5A

 

 
Back to Top

 


 
.