Справочник MOSFET. NCEP026N10D

 

NCEP026N10D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP026N10D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NCEP026N10D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP026N10D Datasheet (PDF)

 ..1. Size:683K  ncepower
 ncep026n10d.pdf pdf_icon

NCEP026N10D

NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 ..2. Size:683K  ncepower
 ncep026n10 ncep026n10d.pdf pdf_icon

NCEP026N10D

NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.1. Size:352K  ncepower
 ncep026n10m.pdf pdf_icon

NCEP026N10D

NCEP026N10M, NCEP026N10MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an

 4.2. Size:302K  ncepower
 ncep026n10ll.pdf pdf_icon

NCEP026N10D

NCEP026N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP025N60 , NCEP025N60AG , NCEP025N60D , NCEP025N60G , NCEP025N85LL , NCEP0260 , NCEP0260D , NCEP026N10 , IRFP250N , NCEP026N10F , NCEP026N10LL , NCEP026N10M , NCEP026N10T , NCEP026N85 , NCEP026N85D , NCEP028N12LL , NCEP028N60AGU .

History: 9N70

 

 
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